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1 - 10 Results for ddr 3 processors memory from 5870 Products
AB ALLEN BRADLEY 1756-L63 CONTROLLOGIX ROCKWELL ALLEN BRADLEY PLC PROCESSOR MEMORY
1756-L63 Controller Rockwell Allen-Bradley Product Details: The 1756-L63 is a Programmable Automation Controller (PAC) from Allen-Bradley. This controller is part of the earlier Logix controller version which is specifically part of the 5560 product series. This controller comes with an RS232 Serial communication interface as the primary communication port, however, this controller supports other communication protocols such as EtherNet/IP,...
Sumset International Trading Co.,Ltd
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1602, No.1 Plaza, No.2 Lujiang Road, Siming District, Xiamen Fujian China
1GB DDR SDRAM Memory IC Chip MT29PZZZ8D5WKFMW-18W.6D
MT29PZZZ8D5WKFMW-18W.6D - 1GB DDR SDRAM Find information here in stock.xlsx Introduction: The MT29PZZZ8D5WKFMW-18W.6D is a 1GB DDR SDRAM module designed for use in a variety of computing and memory-intensive applications. It features a high level of performance, reliability, and compatibility, making it an ideal solution for demanding memory applications. The MT29PZZZ8D5WKFMW-18W.6D also provides a high-speed data transfer rate and low power...
rongxing international trade co.,limited
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Room 2409, 24/F, Block A, Hoover Building 38 Kwai Cheong Road, Kwai Chung, Hong Kong. CHINA
256MB DDR SDRAM Memory IC Chip MT29RZ2C2DZZMGMF-18
MT29RZ2C2DZZMGMF-18 - 256MB DDR SDRAM Find information here in stock.xlsx Introduction: The MT29RZ2C2DZZMGMF-18 is a 256MB DDR SDRAM module designed for use in a variety of computing and memory-intensive applications. It features a high level of performance, reliability, and compatibility, making it an ideal solution for demanding memory applications. The MT29RZ2C2DZZMGMF-18 also provides a high-speed data transfer rate and low power consumption,...
rongxing international trade co.,limited
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Room 2409, 24/F, Block A, Hoover Building 38 Kwai Cheong Road, Kwai Chung, Hong Kong. CHINA
512MB DDR SDRAM Memory IC Chip MT29RZ4B4DZZNGPL-18WE.4
MT29RZ4B4DZZNGPL-18WE.4 - 512MB DDR SDRAM Find information here in stock.xlsx Introduction: The MT29RZ4B4DZZNGPL-18WE.4 is a 512MB DDR SDRAM module designed for use in a variety of computing and memory-intensive applications. It features a high level of performance, reliability, and compatibility, making it an ideal solution for demanding memory applications. The MT29RZ4B4DZZNGPL-18WE.4 also provides a high-speed data transfer rate and low power...
rongxing international trade co.,limited
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Room 2409, 24/F, Block A, Hoover Building 38 Kwai Cheong Road, Kwai Chung, Hong Kong. CHINA
Samsung K4A4G165WF-BCTD Sdram Memory Chips FBGA-96 DDR REACH Unaffected
Samsung K4A4G165WF-BCTD FBGA-96 DDR SDRAM Memory IC Memory IC is an integrated circuit that is designed to store data and program code. It typically includes a range of components, such as memory cells, address decoders, and sense amplifiers. Memory IC common features include: - Memory capacity: This refers to the amount of data that the Memory IC can store. Higher memory capacity values mean more data can be stored. - Access time: This refers to...
Shenzhen GS Electronic Technology Co., Ltd. CN
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4B10, Building B, Overseas Decoration,122 Zhenhua Road,Futian Shenzhen Guangdong,China
MT29RZ4B2DZZHGSK-18W.80 - 512MB DDR SDRAM
MT29RZ4B2DZZHGSK-18W.80 - 512MB DDR SDRAM Find information here in stock.xlsx Introduction: The MT29RZ4B2DZZHGSK-18W.80 is a 512MB DDR SDRAM module designed for use in a variety of computing and memory-intensive applications. It features a high level of performance, reliability, and compatibility, making it an ideal solution for demanding memory applications. The MT29RZ4B2DZZHGSK-18W.80 also provides a high-speed data transfer rate and low power...
rongxing international trade co.,limited
Verified Supplier
Room 2409, 24/F, Block A, Hoover Building 38 Kwai Cheong Road, Kwai Chung, Hong Kong. CHINA
MT29RZ1CVCZZHGTN-18 W.8 - 128MB DDR SDRAM
MT29RZ1CVCZZHGTN-18 W.8 - 128MB DDR SDRAM Introduction: The MT29RZ1CVCZZHGTN-18 W.8 is a 128MB DDR SDRAM module designed for use in a variety of computing and memory-intensive applications. It features a high level of performance, reliability, and compatibility, making it an ideal solution for demanding memory applications. The MT29RZ1CVCZZHGTN-18 W.8 also provides a high-speed data transfer rate and low power consumption, making it suitable for...
rongxing international trade co.,limited
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Room 2409, 24/F, Block A, Hoover Building 38 Kwai Cheong Road, Kwai Chung, Hong Kong. CHINA
S25FL064LABBHI020 Flash Memory Chips 24-TBGA Package Double Data Rate (DDR) Option
S25FL064LABBHI020 Flash Memory Chips 24-TBGA Package Double data rate (DDR) option Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 64Mbit Memory Organization 8M x 8 Memory Interface SPI - Quad I/O, QPI Clock Frequency 108 MHz Write Cycle Time - Word, Page - Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 24-TBGA Supplier Device Package 24-BGA (8x6)...
Shenzhen Sai Collie Technology Co., Ltd.
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1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Micron MT41K256M16TW-107 AIT:P Flash Memory Ic Chip 512Mb DDR3 SDRAM
Product Listing: MT41K256M16TW-107 AIT:P Flash Memory Chips Parameters: - Capacity: 256Mb - Organization: 16M x 16 - Type: SDRAM - Density: 4Gb - Interface: SDR, DDR, LV-DDR - Operating Temp: -40°C to +85°C - Package Type: TSOP-64 Product Status Active Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 4Gbit Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Write Cycle Time - Word, Page -...
Shenzhen Sai Collie Technology Co., Ltd.
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1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
S26KS512SDPBHN020 NOR Memory IC 24-FBGA Integrated Circuit Chip 512Mbit Memory IC
S26KS512SDPBHN020 NOR Memory IC 24-FBGA Integrated Circuit Chip 512Mbit Memory IC Product Description Of S26KS512SDPBHN020 S26KS512SDPBHN020 is high-speed CMOS, MIRRORBIT™ NOR flash devices with the HYPERBUS™ low signal count DDR interface, that achieves high speed read throughput. The DDR protocol transfers two data bytes per clock cycle on the data (DQ) signals. Specification Of S26KS512SDPBHN020 Part Number S26KS512SDPBHN020 Memory Interface...
ShenZhen Mingjiada Electronics Co.,Ltd.
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1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
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