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1 - 10 Results for bipolar transistor from 19766 Products
Discrete Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode ABB IGBT Module
New Insulated Gate Bipolar Transistor (IGBT) For B2B Buyers Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is designed to provide superior performance in demanding applications where normal voltage is required. The IGBT has the best of both worlds: the fast switching speed of a bipolar junction transistor...
MMR TECHNOLOGY HK LIMITED
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Suite 9A, 9/F, Hennessy Plaza, 164-166 Hennessy Road, Wanchai, HK
NPN Bipolar Transistor IC Chip 100V 65W 6A TIP41C Single Transistor
Single transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin to-220 package 3.Trans GP BJT NPN 100V 6A 65000mW 3-Pin(3+Tab) TO-220AB Tube 4.The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching...
Shenzhen Res Electronics Limited
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B615, Niulanqian Building, Minzhi Avenue, Longhua District, Shenzhen City, Guangdong Province, China
MMR Insulated Gate Bipolar Transistor Diode Modules IGBT 400a 600v 1200v
High Performance Black Insulated Gate Bipolar Transistor For General Purpose Applications *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {display: block; max-width: 100%; } input, button, textarea, select {font: inherit; } p, h1, h2, h3, h4, h5, h6 {overflow-wrap: break-word; } ul, li, ol {padding: 0; list...
MMR TECHNOLOGY HK LIMITED
Verified Supplier
Suite 9A, 9/F, Hennessy Plaza, 164-166 Hennessy Road, Wanchai, HK
1200V 15A Power Insulated-Gate Bipolar Transistors Igbts
High Quality 1200V 15A Insulated Gate Bipolar Transistor IGBT *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {display: block; max-width: 100%; } input, button, textarea, select {font: inherit; } p, h1, h2, h3, h4, h5, h6 {overflow-wrap: break-word; } ul, li, ol {padding: 0; list-style-position: inside; }...
MMR TECHNOLOGY HK LIMITED
Verified Supplier
Suite 9A, 9/F, Hennessy Plaza, 164-166 Hennessy Road, Wanchai, HK
DTD123ECT116 Bipolar Transistor 50V 500mA 200MHz 200mW Surface Mount SST3
DTD123ECT116 Bipolar Transistor 50 V 500 mA 200 MHz 200 mW Surface Mount SST3 Product Attributes of DTD123ECT116 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Mfr ROHM Series - Product Status Active Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500 mA Voltage - Collector Emitter Breakdown (Max) 50 V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base...
SZ ADE Electronics Co., Ltd
Verified Supplier
Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
SMBT3946DW1T1G Bipolar Transistor Array NPN, PNP 40V 200mA 300MHz 250MHz 150mW
SMBT3946DW1T1G Bipolar Transistor Array NPN, PNP 40V 200mA 300MHz 250MHz 150mW Specifications of SMBT3946DW1T1G TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays Mfr onsemi Series - Package Tape & Reel (TR) Cut Tape (CT) Product Status Active Transistor Type NPN, PNP Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 300mV @...
SZ ADE Electronics Co., Ltd
Verified Supplier
Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
2SC5200 BJT NPN Transistor 230V 15A 150W Mosfet Bipolar Transistor
2SC5200 BJT NPN Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Applications • power amplification Date Sheet Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Package / Case: TO-3P-3 Transistor Polarity: NPN...
Shenzhen Retechip Electronics Co., Ltd
Verified Supplier
Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
2SC4468 Transistor IC Chip 3 Pin 600V 55A Bipolar Transistor
Original 2SC4468 Two polar transistor TO-3-3 Products Description: 1. TO-3P NPN 140V 10A 2. 2SC4468 bipolar transistor 3. Bipolar(BJT)Transistor NPN 140v 10a 20 MHz 100W Through Hole to-3p 4. Trans GP BJT NPN 140V 10A 3-pin(3+Tab) Technological Parameters: frequency 20 MHz Dissipation power 100 W polarity NPN installation Through Hole Pin number 3 encapsulation TO-3-3 material Silicon packing way Bulk breakdown voltage 140 V Working temperature...
Shenzhen Res Electronics Limited
Verified Supplier
B615, Niulanqian Building, Minzhi Avenue, Longhua District, Shenzhen City, Guangdong Province, China
BC337-40 Transistor IC Chip NPN Bipolar Transistor General Purpose
High-Quality BC337-40 NPN Bipolar Transistors for General Purpose Applications Enhance your electronic circuits with the STMicroelectronics BC337-40 NPN Bipolar Transistors. These high-quality through-hole transistors are designed for general-purpose applications, offering reliable and versatile performance. The BC337-40 features a single NPN configuration and comes in a TO-92-3 package, ensuring easy integration into various circuit designs. It...
Yougou Electronics (Shenzhen) Co., Ltd.
Verified Supplier
Shenzhen, Futian District, Huaqiang North SEG Plaza, Room 6401 A
JAN2N2222A Microchip Microsemi Bipolar Transistors BJT BJTs RF Transistors
JAN2N2222A Microchip / Microsemi Bipolar Transistors - BJT BJTs Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 800 mA Pd - Power Dissipation: 500 mW Gain Bandwidth Product fT: - Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 200 C Packaging: Bulk Brand: Microchip / Microsemi Product Type: BJTs - Bipolar Transistors Factory Pack...
Wisdtech Technology Co.,Limited
Verified Supplier
Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China
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