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76.2mm Al2O3 Crystal Sapphire Substrate 2 4 6 Inch SSP DSP 0.5mm C - Axis

76.2mm Al2O3 Crystal Sapphire Substrate 2 4 6 Inch SSP DSP 0.5mm C - Axis

Brand Name:zmkj
Model Number:3INCH*0.5mmt
Minimum Order Quantity:25pcs
Delivery Time:3-5weeks
Payment Terms:T/T, Western Union, MoneyGram
Place of Origin:china
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Location: Shanghai Shanghai China
Address: Rm5-616,NO.851,Dianshanhu road; Qingpu area;shanghai city//201799
Supplier`s last login times: within 38 hours
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Product Details

2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness

About synthetic sapphire crystal

Sapphire Properties

GENERAL
Chemical FormulaAl2O3
Crystal StuctureHexagonal System ((hk o 1)
Unit Cell Dimensiona=4.758 Å,Å c=12.991 Å, c:a=2.730
PHYSICAL
MetricEnglish (Imperial)
Density3.98 g/cc0.144 lb/in3
Hardness1525 - 2000 Knoop, 9 mhos3700° F
Melting Point2310 K (2040° C)
STRUCTURAL
Tensile Strength275 MPa to 400 MPa40,000 to 58,000 psi
at 20°400 MPa58,000 psi (design min.)
at 500° C275 MPa40,000 psi (design min.)
at 1000° C355 MPa52,000 psi (design min.)
Flexural Stength480 MPa to 895 MPa70,000 to 130,000 psi
Compression Strength2.0 GPa (ultimate)300,000 psi (ultimate)

The Kyropoulos process (KY process) for sapphire crystal growth is currently used by many companies in China to produce sapphire for the electronics and optics industries.
High-purity, aluminum oxide is melted in a crucible at over 2100 degrees Celsius. Typically the crucible is made of tungsten or molybdenum. A precisely oriented seed crystal is dipped into the molten alumina. The seed crystal is slowly pulled upwards and may be rotated simultaneously. By precisely controlling the temperature gradients, rate of pulling and rate of temperature decrease, it is possible to produce a large, single-crystal, roughly cylindrical ingot from the melt.
After single crystal sapphire boules are grown, they are core-drilled into cylindrical rods, The rods are sliced up into the desired window thickness and finally polished to the desired surface finish.

Use as substrate for semiconducting circuits
Thin sapphire wafers were the first successful use of an insulating substrate upon which to deposit silicon to make the integrated circuits known as silicon on sapphire or "SOS", Besides its excellent electrical insulating properties, sapphire has high thermal conductivity. CMOS chips on sapphire are especially useful for high-power radio-frequency (RF) applications such as those found in cellular telephones, public-safety band radios, and satellite communication systems.
Wafers of single-crystal sapphire are also used in the semiconductor industry as substrates for the growth of devices based on gallium nitride (GaN). The use of sapphire significantly reduces the cost, because it has about one-seventh the cost of germanium. Gallium nitride on sapphire is commonly used in blue light-emitting diodes (LEDs).

Used as a window material
Synthetic sapphire (sometimes referred to as sapphire glass) is commonly used as a window material, because it is both highly transparent to wavelengths of light between 150 nm (UV) and 5500 nm (IR) (the visible spectrum extends about 380 nm to 750 nm, and extraordinarily scratch-resistant. The key benefits of sapphire windows are:
* Very wide optical transmission band from UV to near-infrared
* Significantly stronger than other optical materials or glass windows
* Highly resistant to scratching and abrasion (9 on the Mohs scale of mineral hardness scale, the 3rd hardest natural substance next to moissanite and diamonds)
* Extremely high melting temperature (2030 °C)

CATALOGU & Stcok List

Standard wafer

2 inch C-plane sapphire wafer SSP/DSP
3 inch C-plane sapphire wafer SSP/DSP
4 inch C-plane sapphire wafer SSP/DSP
6 inch C-plane sapphire wafer SSP/DSP
Special Cut
A-plane (1120) sapphire wafer
R-plane (1102) sapphire wafer
M-plane (1010) sapphire wafer
N-plane (1123) sapphire wafer
C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis
Other customized orientation
Customized Size
10*10mm sapphire wafer
20*20mm sapphire wafer
Ultra thin (100um) sapphire wafer
8 inch sapphire wafer

Patterned Sapphire Substrate (PSS)
2 inch C-plane PSS
4 inch C-plane PSS

2inch

DSP C-AXIS 0.1mm/0.175mm/0.2mm/0.3mm/0.4mm

/0.5mm/ 1.0mmt

SSP C-axis 0.2/0.43mm

(DSP&SSP) A-axis/M-axis/R-axis 0.43mm


3inch

DSP/ SSP C-axis 0.43mm/0.5mm


4Inch

dsp c-axis 0.4mm/ 0.5mm/1.0mm

ssp c-axis 0.5mm/0.65mm/1.0mmt


6inch

ssp c-axis 1.0mm/1.3mmm


dsp c-axis 0.65mm/ 0.8mm/1.0mmt



Specification for substrates

ItemParameterSpecUnit
1Product NameSapphire Wafer (Al2O3)
2Diameter2”4”6”mm
3Thickness430± 25650± 251000 ± 25μm
4Surface OrientationC-Plane (0001) tilted M-axis 0.2°/0.35°± 0.1°degree
5Primary FlatA-Axis (11-20) ± 0.2°degree
Orientation Length16 ± 0.531 ± 1.047.5 ± 2.0mm
6TTV< 10< 10< 25μm
7Bow-10 ~ 0-15 ~ 0-30 ~ 0μm
8Warp102030μm
9Roughness Front Side0.50.50.5nm
10Roughness Back Side1.0 ± 0.3μm
11Wafer EdgeR-Type or T-Type
12Laser MarkCustomize

Products Detail

other related sapphire products

Payment / Shipping

Q: What's the way of shipping and cost?


(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.

(2) If you have your own express account, it's great.


Q: How to pay?


(1) T/T, PayPal, West Union, MoneyGram and

Assurance payment on Alibaba and etc..

(2) Bank Fee: West Union≤USD1000.00),

T/T -: over 1000usd ,please by t/t


Q: What's the deliver time?


(1) For inventory: the delivery time is 5 workdays.
(2) For customized products: the delivery time is 7 to 25 workdays. According to the quantity.


Q: Can I customize the products based on my need?


Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.


China 76.2mm Al2O3 Crystal Sapphire Substrate 2 4 6 Inch SSP DSP 0.5mm C - Axis supplier

76.2mm Al2O3 Crystal Sapphire Substrate 2 4 6 Inch SSP DSP 0.5mm C - Axis

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