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MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

Brand Name:FREESCALE
Certification:Lead free / RoHS Compliant
Model Number:MRF6S9045NR1
Minimum Order Quantity:50
Delivery Time:Within 3days
Payment Terms:T/T in advance, Paypal, Western Union
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Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031
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MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors


Description:


Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large - signal, common - source amplifier

applications in 28 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,

IDQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 22.7 dB

Drain Efficiency — 32%

ACPR @ 750 kHz Offset — -47 dBc @ 30 kHz Bandwidth


Applications:


GSM EDGE Application

• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA,

Pout = 16 Watts Avg., Full Frequency Band (921-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 46%

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 1.5% rms

GSM Application

• Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,

Full Frequency Band (921-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 68%

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Integrated ESD Protection

• N Suffix Indicates Lead-Free Terminations

• 200°C Capable Plastic Package

• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.


Specifications:


Datasheets

MRF6S9045NR1,NBR1

Standard Package

500

Category

Discrete Semiconductor Products

Family

RF FETs

Series

-

Packaging

Tape & Reel (TR)

Transistor Type

LDMOS

Frequency

880MHz

Gain

22.7dB

Voltage - Test

28V

Current Rating

10µA

Noise Figure

-

Current - Test

350mA

Power - Output

10W

Voltage - Rated

68V

Package / Case

TO-270AA

Supplier Device Package

TO-270-2


Competitive Advantage:


Warranty :180days for all goods

Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.

Mega Source Electronics stocks components ready to ship. Hard to find, obsolete and highly allocated integrated circuits and semiconductors are all can be found by us.

Mega Source Electronics has established a well-developed logistics system and global logistics network, which can guarantee our service very quick, convenient and efficient.


Tag:

MRF6S9045NR1,MRF6S9045NBR1,MRF6S9045MR1,MRF6S9045MBR1

China MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors supplier

MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

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