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MJF127G Bipolar (BJT) Transistor PNP - Darlington 100 V 5 A 2 W Through Hole

China MJF127G Bipolar (BJT) Transistor PNP - Darlington 100 V 5 A 2 W Through Hole on sale
MJF127G Bipolar (BJT) Transistor PNP - Darlington 100 V 5 A 2 W Through Hole Specifications of MJF127G TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors Mfr onsemi Series - Package Tube Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 0.208333333 Voltage - Collector Emitter Breakdown (Max) 100 V Vce Saturation (Max) @ Ib, Ic 3.5V @ 20mA, 5A Current - Collector Cutoff (Max...
SZ ADE Electronics Co., Ltd
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Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen,Guangdong, China. Post code: 518100

Durable High Speed Power Switching Transistor , Power Darlington Transistor

China Durable High Speed Power Switching Transistor , Power Darlington Transistor on sale
Durable High Speed Power Switching Transistor , Power Darlington Transistor General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications Application Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS(th) (max V) Ciss (pF) Coss...
Beijing Silk Road Enterprise Management Services Co.,LTD
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Durable High Speed Power Switching Transistor , Power Darlington Transistor

China Durable High Speed Power Switching Transistor , Power Darlington Transistor on sale
Durable High Speed Power Switching Transistor , Power Darlington Transistor General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications Application Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS(th) (max V) Ciss (pF) Coss...
Beijing Silk Road Enterprise Management Services Co.,LTD
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MJD122T4G Darlington Transistor IC 8A 100V Bipolar Power NPN

China MJD122T4G Darlington Transistor IC 8A 100V Bipolar Power NPN on sale
MJD122T4G Darlington Transistors 8A 100V Bipolar Power NPN Manufacturer: onsemi Product Category: Darlington Transistors RoHS: Details Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Collector- Base Voltage VCBO: 100 V Maximum DC Collector Current: 8 A Maximum Collector Cut-off Current: 10 uA Pd - Power Dissipation: 20 W Mounting Style: SMD/SMT Package / Case: TO-252-3...
Wisdtech Technology Co.,Limited
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Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

TIP127 Darlington Transistors IC Chips Integrated Circuits IC Chips IC

China TIP127 Darlington Transistors IC Chips Integrated Circuits IC Chips IC on sale
TIP127 Darlington Transistors IC Chips Integrated Circuits IC Chips IC PRODUCT DESCRIPTION Part number # TIP127 is manufactured by ST Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we carry many electronic components from the world's top manufacturers. For more information on TIP127 detailed specifications, quotations, lead times, payment terms and more, please do not hesitate to contact us. In...
Hong Kong Jia Li Xin Technology Limited
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ROOM 1201,12/F TAI SANG BANK BUILDING 130-132 DES VOEUX ROAD,CENTRAL HK

Infineon Pnp Power Transistor IRF9530PBF 100V 14A 200MOhms 1 P Channel 38.7 NC

China Infineon Pnp Power Transistor IRF9530PBF 100V 14A 200MOhms 1 P Channel 38.7 NC on sale
Infineon Pnp Power Transistor IRF9530PBF -100V -14A 200 MOhms 1 P-Channel 38.7 NC Applications Increased ruggedness Wide availability from distribution partners Industry standard qualification High performance in low frequency applications Standard pin-out allows for drop-in replacement High current capability Description -100V Single P-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

Texas Instruments Darlington Transistor Circuit ULN2803ADW SOIC-18

China Texas Instruments Darlington Transistor Circuit ULN2803ADW SOIC-18 on sale
Texas Instruments ULN2803ADW SOIC-18 Darlington Transistor Discrete Semiconductor Products include electronic components that perform a single function, such as rectification, amplification, or switching, in an electronic circuit. Some common examples of Discrete Semiconductor Products include diodes, transistors, and thyristors. Discrete Semiconductor Products common features include: - Maximum voltage and current ratings: This refers to the...
Shenzhen GS Electronic Technology Co., Ltd. CN
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4B10, Building B, Overseas Decoration,122 Zhenhua Road,Futian Shenzhen Guangdong,China

NL3K4AD Pnp MOS Transistor / Transistor Ic / Pnp Ic TO-220F New And Original NL3K4AD

China NL3K4AD Pnp MOS Transistor / Transistor Ic / Pnp Ic TO-220F New And Original NL3K4AD on sale
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ShenZhen QingFengYuan Technology Co.,Ltd.
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Room 2808-2809, Duhuixuan, No. 3018, Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen

FQPF7N60C Automotive IC BOM List Power Transistor Darlington Transistors Triode TO220 FQPF7N60C

China FQPF7N60C Automotive IC BOM List Power Transistor Darlington Transistors Triode TO220 FQPF7N60C on sale
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ShenZhen QingFengYuan Technology Co.,Ltd.
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Room 2808-2809, Duhuixuan, No. 3018, Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen

NPN And PNP Mosfet Transistor SOT-23 SOT-23-3 LN2306LT1G

China NPN And PNP Mosfet Transistor SOT-23 SOT-23-3  LN2306LT1G on sale
Original New MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LN2306LT1G Products Description: 1. Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R 2. Diodes and Rectifiers N-channel 30V 5.8A 3. High Density Cell Design For Ultra Low On-Resistance 4 Advanced trench process technology 30V N-Channel Enhancement-Mode MOSFET Technological Parameters: Drain-source resistance 0.038 Ω polarity N threshold voltage 0.7 V Drain-Source Voltage (Vds) 30 V Continuous...
Shenzhen Res Electronics Limited
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B615, Niulanqian Building, Minzhi Avenue, Longhua District, Shenzhen City, Guangdong Province, China
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