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1 - 10 Results for npn pnp transistors from 13409 Products
Vishay IRF740PBF NPN PNP Transistors 400V 10A Power MOSFET 125W 550 MOhms
Vishay IRF740PBF Npn And Pnp Transistor 400V 10A Power MOSFET 125W 550 MOhms Description Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
Infineon Coolmos IPB60R099P7 NPN PNP Transistors 600V 31A 77 MOhms
Infineon 600V Coolmos IPB60R099P7 600V 31A 77 MOhms Npn Power Transistor Applications • Hard switching PWM stages and resonant switching stages • Adapter,LCD&PDP TV, Lighting Description 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
IRFS4227TRLPBF NPN PNP Transistors 200V 62A 70nC Qg N Channel Mosfet
Infineon Silicon Npn Power Transistors IRFS4227TRLPBF 200V 62A 26mOhm 70nC Qg N Channel Mosfet Applications • Hard switching PWM stages and resonant switching stages • Adapter,LCD&PDP TV, Lighting Description This HEXFET® Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
FDA59N30 NPN PNP Transistors 59A 300V N Channel 56 MOhms High Power Transistor
FDA59N30 Pnp Power Transistor 59A 300V N-Channel 56 MOhms High Power Transistor Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
TIP122 TIP127 TIP142P NPN PNP Transistor Bipolar Discrete Semiconductors
TIP35C TIP41C TIP42C TIP122 TIP127 TIP142P Complementary NPN - PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications...
Angel Technology Electronics Co
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Fl12,Tower E XingHe World LongHua District Shenzhen China 518000
TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS
TOSHIBA TK39A60W Power Switching Transistor 38.8A 600V 50W 4100pF Silicon N-Channel MOS Applications Switching Voltage Regulators Description Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
TK5A90E,S4X NPN PNP Transistors 4.5A 900V 3.1Ohms N Channel Mosfet
TK5A90E,S4X switching voltage regulators 4.5A 900V 3.1Ohms N-Channel Mosfet Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs are offered with a drain-source voltage range of 250V up to 650V, and with a drain current range from 2A to 20A....
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
Fuji N-Channel NPN PNP Transistors FMH23N50E Silicon Power Mosfet 23a 500v
Fuji N-Channel FMH23N50E Silicon Power Mosfet 23a 500v Dc-Dc Converters Power Supply Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
TIP42C Bipolar NPN PNP Transistors 100V 6A Current 65W Power HFE Grouping
TIP42C NPN PNP Transistors Bipolar (BJT) Transistor PNP 100V 6A 65W Features ■ Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching Description The TIP41C is a base island technology NPN power transistor in TO-252 plastic package that make this device suitable for audio, power linear and switching...
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA
FMMT734TA Darlington NPN PNP Transistors 140MHz 625mW Surface Mount SOT 23 3
FMMT734TA NPN PNP Transistors Bipolar (BJT) Transistor PNP - Darlington 100V 800mA 140MHz 625mW Surface Mount SOT-23-3 Features BVCEO > -100V IC = -800mA High Continuous Collector Current Darlington Transistor hFE > 20k @ 100mA for High Gain High Gain Hold-Up to 5A 625mW Power Dissipation Complementary Darlington NPN Type: FMMT634 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device...
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA
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