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1 - 10 Results for n channel silicon mosfet from 10090 Products
Infineon IRFM250 N Channel Mosfet 105 Mohms DC DC Converters Npn Power Transistor
IRFM250 Power MOSFET POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHANNEL HEXFET® MOSFET TECHNOLOGY Product Introduction The IRFM250 is a high-power N-channel MOSFET designed for various applications, including power supplies, motor control, and switching circuits. This MOSFET offers exceptional performance and efficiency with its low...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
IRFP064NPBF N-Channel Mosfet 55V 98A 8mOhm 113.3nCAC TO-247-3
IRFP064NPBF N-Channel Mosfet 55V 98A 8mOhm 113.3nCAC TO-247-3 Specifications Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package/Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 110 A Rds On - Drain-Source Resistance: 8 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
IRFP9240PBF P-Channel MOSFET 200V 12A 500 mOhms TO-247-3 Transistors
IRFP9240PBF P-Channel MOSFET 200V 12A TO-247-3 Transistors FEATURES •Dynamic dV/dt rating •Repetitive avalanche rated •P-channel •Isolated central mounting hole •Fast switching •Ease of paralleling •Simple drive requirements •Material categorization: for definitions of compliance DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
NVMTS1D2N08H 80V 337A 1.1mOhms DFNW-8 AEC-Q101 N-Channel MOSFET
NVMTS1D2N08H 80V 337A 1.1mOhms DFNW-8 AEC-Q101 N-Channel MOSFET Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Specifications Product Attribute Attribute Value Product Category: MOSFET Vds - Drain-Source Breakdown Voltage: 80 V Id - Continuous Drain Current:...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
BSC109N10NS3G npn power transistors 109N10NS n-channel mosfet
BSC109N10NS3G npn power transistors 109N10NS n-channel mosfet 100V 63A TDSON-8 OptiMOS Features · Very low gate charge for high frequency applications ·Optimized for dc-dc conversionN-channel, normal level ·Excellent gate charge x RDs(on)product (FOM) · Very low on-resistance RDs(on) ·150 C operating temperature · Pb-free lead plating; RoHS compliant ·Qualified according to JEDEC1) for target application · Halogen-free according to lEC61249-2...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
N-Channel MOSFET IRFP4668PBF Transistor 130 A 200 V 520W 9.7 MOhms TO-247AC
IRFP4668PBF N-Channel MOSFET 130 A 200 V TO-247AC Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free Absolute Maximum Ratings Static @ TJ = 25°C (unless otherwise...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
FW163-TL-E ----- P-Channel Silicon MOSFET General-Purpose Switching Device
Quick Detail: P-Channel Silicon MOSFET General-Purpose Switching Device Specifications: part no. FW163-TL-E Manufacturer SANYO supply ability 20000 datecode 11+ package SOP remark new and original stock Competitive Advantage: Warranty :180 days ! Free shipping: Order over $1000 win a free shipment fee (goods weight below 3Kg) ,during 20130901-20130930 ....
Mega Source Elec.Limited
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R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031
1700V N-Channel Power MOSFET MSC750SMA170S Integrated Circuit Chip TO-268-3
1700V N-Channel Power MOSFET MSC750SMA170S Integrated Circuit Chip TO-268-3 Product Description Of MSC750SMA170S MSC750SMA170S is a 1700 V, 750 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-268 (D3PAK) package, Surface Mount. Specification Of MSC750SMA170S Part Number: MSC750SMA170S Technology: SiC Mounting Style: SMD/SMT Package / Case: D3PAK-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage...
ShenZhen Mingjiada Electronics Co.,Ltd.
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1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
Automotive IGBT Modules MSCSM70DUM017AG 2N-Channel SiC MOSFET Power Module 700V
Automotive IGBT Modules MSCSM70DUM017AG 2N-Channel SiC MOSFET Power Module 700V Product Description Of MSCSM70DUM017AG MSCSM70DUM017AG is a 700V/1021A 2 N-Channel (Dual) Common Source silicon carbide (SiC) MOSFET power module. Specification Of MSCSM70DUM017AG Part Number MSCSM70DUM017AG Input Capacitance (Ciss) (Max) @ Vds 40500pF @ 700V Power - Max 2750W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Chassis Mount Package / Case...
ShenZhen Mingjiada Electronics Co.,Ltd.
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1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
N-Channel Power MOSFET Transistors MSC017SMA120B4 TO-247-4 Integrated Circuit Chip
N-Channel Power MOSFET Transistors MSC017SMA120B4 TO-247-4 Integrated Circuit Chip Product Description Of MSC017SMA120B4 MSC017SMA120B4 is a 1200 V, 17 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-247 package with a source sense. Specification Of MSC017SMA120B4 Part Number MSC017SMA120B4 Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 113A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs...
ShenZhen Mingjiada Electronics Co.,Ltd.
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1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
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