IKW40N120T2 IKW40N120CS6XKSA1 IKW50N65H5 IKA10N65ET6 Insulated Gate Bipolar Transistor Applications Frequency Converters Uninterrupted Power Supply Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.75 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 75 A...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver
LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output current: 1.5A • Operating temperature range: -40°C to +85°C • Lead-free and RoHS compliant • Low power consumption • High efficiency • Low EMI • High temperature stability • High reliability and long term durability • Excellent electrical insulation • Small...
Shenzhen Sai Collie Technology Co., Ltd.
Verified Supplier
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
New Insulated Gate Bipolar Transistor (IGBT) For B2B Buyers Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is designed to provide superior performance in demanding applications where normal voltage is required. The IGBT has the best of both worlds: the fast switching speed of a bipolar junction transistor...
MMR TECHNOLOGY HK LIMITED
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Suite 9A, 9/F, Hennessy Plaza, 164-166 Hennessy Road, Wanchai, HK
Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor device with an excellent combination of low conduction losses, high switching frequency, high reliability, and high current density. High Power IGBT has a current density of 400A/cm2 and an application frequency of 60KHz. It also has a number of advantages, such as its...
Reasunos Semiconductor Technology Co., Ltd.
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405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province
General Electric DS200IIBDG1AEA DS200IIBDG1A GE Insulated Gate Bipolar Transistor Board
Product:General Electric DS200IIBDG1AEA DS200IIBDG1A GE Insulated Gate Bipolar Transistor Board The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A contains nine indicator LEDs that provide a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you...
N.S.E AUTOMATION CO., LIMITED
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Room 1904, Building B, Diamond Coast, No. 96 Lujiang Road, Siming District, Xiamen, Fujian, China 361001