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1 - 10 Results for diode for microwave from 19 Products
2CL3512H 350mA 12kV High Voltage Silicon Diodes For Microwave Oven
2CL3512H 350mA 12kV High Voltage Silicon Diodes for Micro - wave oven 2CL4512H etc. MAXIMUM RATINGS AND CHARACTERISTICS: Ta=25°C (Absolute Maximum Ratings) Repetitive Peak Renerse Voltage : 12 KV Average Forward Current Maximum:350 mA Non-Repetitive Forward Surge Current:30A Reverse surge current:100mA Junction Temperature:130°C Allowable Operation Case Temperature:-40~+130°C Storage Temperature: -40~+130°C ELECTRICAL CHARACTERISTICS: Ta=25°C...
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA
Diode Glass Coating Ntc Thermistor For Induction Cooker Microwave Oven 1k
Diode Glass Coating Ntc Thermistor For Induction Cooker, Microwave Oven 1k Brief Instruction: MF58 series glass bead temperature sensor,as one NTC thermistor sensor, 1K Diode Glass Coating NTC Thermistor is made of glass bead, thinner dumet wire. Its feature is high temperature resistance. Glass coating NTC thermistor be widely apply for automotive electronic, house appliances, industrial device etc. Features: Glass encapsulation High temperature...
Hefei Jingpu Sensor Technology Co., Ltd
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Building No.2, Jinhui Photoelectric Industrial Park, Intersection of Paihe Avenue and Jixian Rd, Feixi, Hefei, Anhui, China
4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave
JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required...
Shanghai GaNova Electronic Information Co., Ltd.
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Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
Kovar Capillary Tube Size OD 3mm-T0.8mm-L200mm Microwave Tubes
Kovar(4J29) Alloy Material Kovar/4J29/UNS K94610/W.Nr.1.3912 Kovar glass sealed and controlled expansion alloys Equal grades: ASTM F15, Nilo-K,UNS K94610 (FeNi29Co17), 4J29, 29HК Applications: Kovar alloy has been used for making hermetic seals with the harder Pyrex glasses and ceramic materials This alloy has found wide application in power tubes, microwave tubes, transistors and diodes. Integrated circuits, it has been used for the flat pack...
Ohmalloy Material Co.,Ltd
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Room 311, No.1211, Mudanjiang Road, Baoshan district, Shanghai
High Voltage Diode 2CL4512 12KV Microwave Oven Diode
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ShenZhen QingFengYuan Technology Co.,Ltd.
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Room 2808-2809, Duhuixuan, No. 3018, Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen
2CL103 2CL104 350mA High Voltage Rectifier Diode High Speed Switching
Low Frequency High Voltage Rectifier Diode 2CL103 2CL104 350mA Features • High speed switching • High voltage power supply • High reliability design • Voltage multiplier assembly Applications • High voltage, Medium Power • High voltage generator • Small package, Epoxy resin • Microwave Power Specifications Type no Maximum working peak reverse voltage Vrm & Vr (KV) Maximum average rectifier output current Io @ Ta = 30℃ mAmps Maximum single cycle...
Wuxi Xuyang Electronics Co., Ltd.
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No.149, Zhongxin Road, Gaocheng Town, Yixing City, Jiangsu, China
SMDT-800I-08 Diode-Thyristor Module FUJITSU RF Power Transistors NI-787
SMDT-800I-08 is a Diode-Thyristor Module. Part NO: SMDT-800I-08 Brand: FUJITSU Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers, microwave communication equipment, satellite...
Mega Source Elec.Limited
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R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031
WCu Material / Tungsten Copper Heat Sink Nickel Plated For Laser Diode Submounts
WCu Material / Tungsten Copper Heat Sink Nickel Plated For Laser Diode Submounts Description: It is a composite of tungsten and copper. The coefficient of thermal expansion (CTE) of the composite can be disigned by controlling the content of tungsten, matching that of the materials, such as Ceramics (Al2O3, BeO),Semiconductors (Si),Metals (Kovar), etc. The products are widely applicated in the fields such as radio frequency,microwave,high power...
Zhuzhou Jiabang Refractory Metal Co., Ltd
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No.5 Building, No.581 Heilong Jiang Road, Li Yu Industrial Park, Tian Yuan District, Zhuzhou, Hunan, P.R. China.
PG-TO247-3 series Infineon field effect MOS tube low electromagnetic interference
PG-TO247-3 series Infineon field effect MOS tube low electromagnetic interference Applications: • Inductive cooking • Inverterized microwave ovens • Resonant converters • Soft switching applications Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TRENCHSTOPTM technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat -...
JULUN (H.K)CO.,LTD (DONGGUAN JULUN ELECTRONICS CO.,LTD)
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Room 408 No:262 middle West Lake Road, Shilong Town, Dongguan City ,Guangdong Province, China
N Type , GaAs Substrate By VGF , 3”, Prime Grade Laser Diodes And LEDs
N Type , GaAs Substrate By VGF , 3”, Prime Grade Laser Diodes And LEDs PAM-XIAMEN provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , the wafers is in diameter range from 2" to 6" in various thicknesses and orientations. We offer single crystal GaAs wafer produced by two main growth techniques LEC...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
#506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
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